CVD of Metal Sulfide Films for Electronics, Sensing and Batteries

Two dimensional transition metal chalcogenide (TMD) materials such as MoS₂ and WS₂ have potential applications in nanoelectronics, sensors, batteries and catalysis. We are synthesizing precursors for the CVD of MoS₂ and WS₂ films and nanostructures. Using mechanism-based precursor design, we are studying the ways in which the precursor chemistry and interactions with the substrate influence the growth habit of the resulting TMD.  Because doping with other elements can be used to tune the properties of TMD materials, we are also designing single source precursors that can be used to deposit doped materials.

Two dimensional transition metal chalcogenide (TMD) materials such as MoS₂ and WS₂ have potential applications in nanoelectronics, sensors, batteries and catalysis. We are synthesizing precursors for the CVD of MoS₂ and WS₂ films and nanostructures. Using mechanism-based precursor design, we are studying the ways in which the precursor chemistry and interactions with the substrate influence the growth habit of the resulting TMD.  Because doping with other elements can be used to tune the properties of TMD materials, we are also designing single source precursors that can be used to deposit doped materials.